Title :
Graphene Field-Effect Transistor Current Source With Double Top-Gates and Double Feedback
Author :
Xurui Mao ; Beiju Huang ; Hongmei Chen ; Chuantong Cheng ; Sheng Gan ; Zhaoxin Geng ; Hongda Chen
Author_Institution :
Inst. of Semicond., Beijing, China
Abstract :
This letter proposes a graphene field-effect transistor (GFET) device with double top-gates and double feedback. An intuitive explanation of the device is provided and its performance is verified by numerical solution of the GFET large signal model in the p- and n-type regions. Simulation shows that the device can provide full current saturation within a large voltage range using a typical GFET´s structure. The saturation current can be adjusted using a control voltage and other circuit parameters, which makes it a voltage-controlled current source suitable for analog and flexible circuit applications.
Keywords :
field effect transistors; graphene devices; semiconductor device models; C; GFET device; GFET large signal model; analog circuit applications; circuit parameters; current saturation; double feedback; double top-gates; flexible circuit applications; graphene field-effect transistor current source; voltage-controlled current source; Electrodes; Field effect transistors; Graphene; Logic gates; Numerical models; FETs; Graphene; current saturation; current source; graphene;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2470539
