• DocumentCode
    3604860
  • Title

    Strong Optical Absorption and Photocarrier Relaxation in 2-D Semiconductors

  • Author

    Kumar, Rajeev ; Verzhbitskiy, Ivan ; Eda, Goki

  • Author_Institution
    Dept. of Phys., Nat. Univ. of Singapore, Singapore, Singapore
  • Volume
    51
  • Issue
    10
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Strongly bound excitons in the 2-D crystals of transition metal dichalcogenides give rise to characteristic optical absorption and emission features. Here, we review and provide additional experimental evidence on the unusually strong optical absorption features of monolayer molybdenum disulfide (MoS2) arising from band nesting and corresponding divergence of joint density of states, which is a distinct signature of 2-D systems. We study low-temperature photoluminescence excitation spectra of suspended MoS4 and discuss spontaneous formation of indirect excitons for excitation at the band nesting point.
  • Keywords
    electronic density of states; excitons; molybdenum compounds; monolayers; photoluminescence; reviews; semiconductor materials; ultraviolet spectra; 2D crystals; 2D semiconductors; MoS2; band nesting point; density of states; indirect excitons; low-temperature photoluminescence excitation spectra; monolayer molybdenum disulfide; optical absorption; photocarrier relaxation; review; strongly bound excitons; transition metal dichalcogenides; Absorption; Atomic layer deposition; Crystals; Excitons; Photonic band gap; Stimulated emission; Transition metal Dichalcogenides,; Transition metal dichalcogenides; band nesting; photocarrier relaxation dynamics;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2015.2470549
  • Filename
    7219378