High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology

Author

Ping Chun Peng ; Yu-Zheng Chen ; Woan Yun Hsiao ; Kuang-Hsin Chen ; Ching-Pin Lin ; Bor-Zen Tien ; Tzong-Sheng Chang ; Chrong Jung Lin ; Ya-Chin King

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

36

Issue

10

fYear

2015

Firstpage

1037

Lastpage

1039

Abstract

The one-time programmable (OTP) cell with intra-Fin-cell-isolation (IFCI) on the FinFET high-k metal gate (HKMG) CMOS process is proposed and demonstrated. The field-enhanced dielectric breakdown at Fin corners enables this OTP cell to be operated at low program voltage with fast program speed. The new intra-Fin cell-to-cell isolation eliminates the required wide spacing in the conventional isolation schemes, which successfully shields the neighboring cells from program and read disturbs. Without introducing extra masks or process steps, the CMOS compatible IFCI OTP cell achieves an ultrasmall cell size of 0.076 μm². More than six orders of ON-/OFF-read window is achieved under 4 V programming within 20 μs.

Keywords

CMOS integrated circuits; MOSFET; high-k dielectric thin films; isolation technology; programmable circuits; CMOS compatible IFCI OTP cell; Fin corners; FinFET high-k metal gate CMOS process; HKMG CMOS process; field-enhanced dielectric breakdown; intra-Fin cell-to-cell isolation; intra-Fin-cell-isolation; one-time programmable cell; program disturbs; read disturbs; time 20 mus; CMOS integrated circuits; Computer architecture; FinFETs; Logic gates; Microprocessors; Nonvolatile memory; Anti-fuse OTP; FinFET; high-k dielectric breakdown; logic NVM;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2472300

Filename

7219425