Title :
A Novel Metal-Ferroelectric-Insulator-Silicon FET With Selectively Nucleated Lateral Crystallized Pb(Zr,Ti)O3 and ZrTiO4 Buffer for Long Retention and Good Fatigue
Author :
Jae Hyo Park ; Seung Ki Joo
Author_Institution :
Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
A novel metal-ferroelectric-insulator-silicon (MFIS) field-effect transistor (FET) with a Pt/Pb(Zr,Ti)O3 (PZT)/ ZrTiO4 (ZTO)/p-Si structure was fabricated and investigated for the first time. The PZT was formed by selectively nucleated lateral crystallization (SNLC), showing large rectangularlike grains (~40 μm) and smooth interface properties. An ultrathin ZTO layer showed a high dielectric constant (50), smooth interfaces in a ZTO/p-Si and PZT/ZTO layer, and an excellent interdiffusion barrier. From these material properties, the MFIS FET showed an excellent fatigue characteristic, which did not show any degradation in memory window (2.1 V), gate current density (10-8 A/μm), and fast P/E switching speed (500 ns) even after 1011 fatigue cycles. Furthermore, a long retention time, which only decreased 12.55% after 1 month and 26.97% after 10 years, was exhibited.
Keywords :
buffer circuits; crystallisation; field effect transistors; lead compounds; oxygen; permittivity; semiconductor device manufacture; titanium compounds; zirconium compounds; FET; MFIS; Pb(ZrTi)O3; ZrTiO4; dielectric constant; field-effect transistor; metal-ferroelectric-insulator-silicon; nucleated lateral crystallized buffer; selectively nucleated lateral crystallization; size 40 mum; time 500 ns; voltage 2.1 V; Fatigue; Field effect transistors; Insulators; Logic gates; Silicon; Switches; Metal-ferroelectric-insulator-silicon field-effect transistor (MFIS-FET); Metal-ferroelectric-insulator-silicon field-effect transistor (MFISFET); Pb(Zr,Ti)O3; ZrTiO4; nonvolatile memory;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2472987
