Title :
Minority Carrier Lifetimes in InSb/InAsSb Quantum Dot and InAsSb nBn Photodetectors
Author :
Hoglund, Linda ; Ting, David Z.-Y ; Soibel, Alexander ; Hill, Cory J. ; Fisher, Anita M. ; Keo, Sam A. ; Gunapala, Sarath D.
Author_Institution :
Center of Infrared Photodetectors, Jet Propulsion Lab., Pasadena, CA, USA
Abstract :
The energy level scheme and the minority carrier lifetime in a type-II midwave InSb/InAs0.92Sb0.08 quantum dot structure were compared with bulk InAs0.915Sb0.085 using photoluminescence, absorption, and optical modulation response. Two hole energy levels separated by ~65 meV were identified in the quantum dots, and a decrease of the hole energy barrier with increasing temperatures was observed. The quantum dot minority carrier lifetime increased from 700 ns at 77 K to 1230 ns at 175 K, and is significantly longer than the bulk InAs0.915Sb0.085 lifetime of 300 ns. By insertion of quantum dots in the bulk material, the dominating recombination mechanism changed from the Shockley-Read-Hall to radiative recombination.
Keywords :
III-V semiconductors; arsenic compounds; carrier lifetime; indium compounds; infrared detectors; optical modulation; photodetectors; photoluminescence; semiconductor quantum dots; InAsSb nBn photodetectors; InSb-InAs0.92Sb0.08; InSb/InAsSb quantum dot; Shockley-Read-Hall; absorption; energy level scheme; infrared detectors; minority carrier lifetimes; optical modulation; photoluminescence; radiative recombination; recombination mechanism; temperature 175 K; temperature 77 K; time 300 ns; time 700 ns to 1230 ns; two-hole energy levels; Absorption; Charge carrier lifetime; Detectors; Energy states; Radiative recombination; Temperature dependence; Temperature measurement; InAsSb; InSb; Infrared detectors; absorption; minority carrier lifetime; photoluminescence; quantum dots;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2015.2472396
