• DocumentCode
    3605171
  • Title

    AlN Two-Dimensional-Mode Resonators for Ultra-High Frequency Applications

  • Author

    Cassella, Cristian ; Piazza, Gianluca

  • Author_Institution
    Carnegie Mellon Univ., Pittsburgh, PA, USA
  • Volume
    36
  • Issue
    11
  • fYear
    2015
  • Firstpage
    1192
  • Lastpage
    1194
  • Abstract
    In this letter, we present the first prototype of aluminum nitride two-dimensional-mode resonators (2DMRs) for operation in the ultra-high-frequency range. The 2DMRs in this letter are made of thick AlN films (5.9μm) and rely on both the d31 and the d33 coefficients of AlN to attain high electromechanical coupling (kt2 ), low motional resistance, and a limited lithographic control of the resonance frequency. kt2 > 3.4%, a mechanical quality factor larger than 2400, and >10% lithographic variation of the center frequency were demonstrated.
  • Keywords
    III-V semiconductors; Q-factor; UHF resonators; aluminium compounds; wide band gap semiconductors; 2DMR; AlN; aluminum nitride; electromechanical coupling; lithographic control; mechanical quality factor; motional resistance; two-dimensional-mode resonator; ultrahigh frequency application; Aluminum nitride; Films; Frequency control; Gratings; III-V semiconductor materials; Resistance; Resonant frequency; AlN; Filters; MEMS; Microwave; Resonators; filters; microwave; resonators;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2475172
  • Filename
    7230242