DocumentCode
3605171
Title
AlN Two-Dimensional-Mode Resonators for Ultra-High Frequency Applications
Author
Cassella, Cristian ; Piazza, Gianluca
Author_Institution
Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume
36
Issue
11
fYear
2015
Firstpage
1192
Lastpage
1194
Abstract
In this letter, we present the first prototype of aluminum nitride two-dimensional-mode resonators (2DMRs) for operation in the ultra-high-frequency range. The 2DMRs in this letter are made of thick AlN films (5.9μm) and rely on both the d31 and the d33 coefficients of AlN to attain high electromechanical coupling (kt2 ), low motional resistance, and a limited lithographic control of the resonance frequency. kt2 > 3.4%, a mechanical quality factor larger than 2400, and >10% lithographic variation of the center frequency were demonstrated.
Keywords
III-V semiconductors; Q-factor; UHF resonators; aluminium compounds; wide band gap semiconductors; 2DMR; AlN; aluminum nitride; electromechanical coupling; lithographic control; mechanical quality factor; motional resistance; two-dimensional-mode resonator; ultrahigh frequency application; Aluminum nitride; Films; Frequency control; Gratings; III-V semiconductor materials; Resistance; Resonant frequency; AlN; Filters; MEMS; Microwave; Resonators; filters; microwave; resonators;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2475172
Filename
7230242
Link To Document