• DocumentCode
    3605199
  • Title

    Optoelectronic Investigation of Sb-Doped Cu(In,Ga)Se2

  • Author

    Mansfield, Lorelle M. ; Kuciauskas, Darius ; Dippo, Patricia ; Li, Jian V. ; Bowers, Karen ; To, Bobby ; DeHart, Clay ; Ramanathan, Kannan

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • Volume
    5
  • Issue
    6
  • fYear
    2015
  • Firstpage
    1769
  • Lastpage
    1774
  • Abstract
    In this study, we incorporated Sb into the precursor that was subsequently converted to Cu(In,Ga)Se2 (CIGS) by a selenization process. We observed enhanced grain size and improved device performance compared with similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to explore the changes in native defect compensation and evaluate the origin of a lower energy PL peak that is not typically seen in CIGS.
  • Keywords
    antimony; copper compounds; electric admittance; gallium compounds; grain size; indium compounds; photoluminescence; semiconductor thin films; ternary semiconductors; time resolved spectra; Cu(InGa)Se2:Sb; admittance spectroscopy; capacitance-voltage characterization; grain size; native defect compensation; optoelectronic properties; selenization; time-resolved photoluminescence; Doping; Grain size; Photoluminescence; Photovoltaic cells; Thin films; Admittance spectroscopy; Cu(In; Ga)Se2 (CIGS); Sb doping; defects; photoluminescence; photovoltaic cells; thin films;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2015.2470082
  • Filename
    7234835
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3605199