Title :
A Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch With Delayed Breakdown
Author :
Long Hu ; Jiancang Su ; Zhenjie Ding ; Qingsong Hao
Author_Institution :
Key Lab. for Phys. Electron. & Devices, Xi´an Jiaotong Univ., Xi´an, China
Abstract :
This letter presents a low-energy-triggered bulk gallium arsenide (GaAs) avalanche semiconductor switch with delayed breakdown. The actual optical energy contributing to switch triggering is studied with reference to the switching delay. When an optical pulse triggers the cathode of the 0.625-mm thick GaAs avalanche semiconductor switch biased at 5.2 kV, a delay time of 3.7 ns and a switching time of 258 ps are achieved, indicating a low-energy switch triggering energy of 5.6 nJ. The results of a 1-D simulation show good agreement with experimental voltage and optical waveforms.
Keywords :
III-V semiconductors; avalanche breakdown; gallium arsenide; power semiconductor switches; GaAs; avalanche semiconductor switch; cathode; delayed breakdown; low-energy-triggered bulk gallium arsenide; optical energy; optical pulse trigger; switch triggering; switching delay; time 258 ps; time 3.7 ns; voltage 5.2 kV; Cathodes; Delays; Gallium arsenide; Optical pulses; Optical switches; Ultrafast optics; Avalanche semiconductor switch; avalanche semiconductor switch; delayed breakdown; low-energy triggering; ultrafast switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2475698
