Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal–Organic Chemical Vapor Deposition Grown In2O3 Channel Treated by Oxygen Microwave Plasma

In this letter, thin-film transistors (TFTs) were demonstrated with In₂O₃ channel layer prepared by metal-organic chemical vapor deposition (MOCVD). Treated by O₂ microwave plasma on the In₂O₃ channel, high performance was obtained such as ultra-high field-effect mobility of 243 cm²/Vs, ON/OFF current ratio of 10⁷, and high stability under negative bias illumination stress, although no typical electrical characteristics were observed for TFTs without O₂ microwave plasma treatment. The effects of O₂ microwave plasma treatment were investigated by Hall effect measurements, X-ray photoelectron spectroscopy, and Kelvin probe force microscopy. The results indicated that the O₂ microwave plasma treatment leads to the oxygen ions adsorption onto the In₂O₃ surface and the consequent depletion of In₂O₃ channel. The MOCVD-grown In₂O₃ TFTs with ultra-high field-effect mobility are potentially applied in the next-generation system on panel.