DocumentCode :
3605532
Title :
Monolithic Integration of InP Wire and 
Waveguides on Si Platform
Author :
Nishi, H. ; Takeda, K. ; Tsuchizawa, T. ; Fujii, T. ; Matsuo, S. ; Yamada, K. ; Yamamoto, T.
Author_Institution :
NTT Device Technol. Labs., NTT Corp., Atsugi, Japan
Volume :
7
Issue :
5
fYear :
2015
Firstpage :
1
Lastpage :
8
Abstract :
We report a low-loss InP wire waveguide monolithically integrated with an SiOx waveguide on an Si platform. By means of directly bonding InP to SiO 2, we realized a submicrometer-scale InP wire waveguide with high optical confinement. In addition, a several-micrometer-scale SiOx waveguide with a refractive index difference of ~3% is integrated on the InP wire waveguide via a spot-size converter (SSC). Experimental results indicate that the InP wire waveguide has a propagation loss of 5 dB/cm and that the InP- SiOx SSC has an insertion loss of 0.7 dB and a reflectance of less than -50 dB. By using the SSC, a low coupling loss of 0.9 dB is achieved between the optical fiber and the InP wire waveguide.
Keywords :
III-V semiconductors; indium compounds; integrated optics; optical losses; optical waveguides; refractive index; silicon compounds; InP-SiOx; Si; bonding; insertion loss; low-loss wire waveguide; monolithic integration; optical confinement; optical fiber; propagation loss; reflectance; refractive index difference; spot-size converter; III-V semiconductor materials; Indium phosphide; Licenses; Optical waveguides; Silicon; Substrates; Wires; $mbox{SiO}_x$ waveguide; InP wire waveguide; Si photonics; SiOx waveguide; spot-size converter;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2015.2477511
Filename :
7247627
Link To Document :
