Title :
Write-Once-Read-Many-Times and Bipolar Resistive Switching Characteristics of TiN/HfO2/Pt Devices Dependent on the Electroforming Polarity
Author :
Yan Li ; Xuexue Pan ; Yong Zhang ; Xinman Chen
Author_Institution :
Inst. of Optoelectron. Mater. & Technol., South China Normal Univ., Guangzhou, China
Abstract :
In this letter, we report the dependence of memory characteristics on electroforming polarity based on TiN/HfO2/Pt devices. Bipolar resistive switching (BRS) and write-once-read-many-times memory (WORM) behaviors were obtained after the negative and positive electroforming process, respectively. Analysis of conduction mechanisms of high resistance state confirms that BRS and WORM were dominated by Schottky emission and trap-controlled space charge limited current, respectively. These phenomena can be explained by the filamentary model with the assistance of interfacial role. Moreover, this letter also indicates that the TiN/HfO2/Pt devices have promising application in both RRAM and non-editable WORM.
Keywords :
electroforming; hafnium compounds; platinum; resistive RAM; space charge; titanium compounds; write-once storage; BRS; RRAM; Schottky emission; TiN-HfO2-Pt; WORM; bipolar resistive switching characteristic; electroforming polarity; electroforming process; trap-controlled space charge limited current; write-once-read-many-time memory; Electrodes; Grippers; Hafnium compounds; Resistance; Switches; Threshold voltage; Tin; HfO2; Resistive switching; SCLC; Schottky emission; WORM; electroforming polarity;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2477421
