DocumentCode
3605653
Title
Synthesis and Application of Monolayer Semiconductors (June 2015)
Author
Kuan-Chang Chiu ; Xin-Quan Zhang ; Xiaoze Liu ; Menon, Vinod M. ; Yung-Fu Chen ; Jenn-Ming Wu ; Yi-Hsien Lee
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume
51
Issue
10
fYear
2015
Firstpage
1
Lastpage
10
Abstract
Recently, semiconducting monolayers, such as MoS2 and WSe2, have been highlighted for their spin-valley coupling, diverse band structures, bendability, and excellent optoelectronic performances. With a subnanometer thickness of atomic layers, the transition metal dichalcogenides (TMDc) atomic layers demonstrate a significant photoresponse, considerable absorption to incident sunlight and favorable transport performances, leading to applications in the electronic circuit requiring low stand-by power, diverse optoelectronic devices, and next-generation nanoelectronics. Therefore, the class of monolayer TMDc offers a burgeoning field in materials science, fundamental physics, and optoelectronics. A feasible synthetic process to realize controlled synthesis of large area and high quality of TMDc monolayers is in demands. In this review, we will introduce the progress on synthesis and applications of the TMDc atomic layers.
Keywords
band structure; chalcogenide glasses; molybdenum compounds; monolayers; tungsten compounds; MoS2; TMD atomic layers; TMD monolayers; WSe2; bendability; diverse band structures; diverse optoelectronic devices; electronic circuit; monolayer semiconductors; next-generation nanoelectronics; optoelectronic performances; spin-valley coupling; transition metal dichalcogenide atomic layers; transport performances; Annealing; Atomic layer deposition; Crystals; Graphene; Process control; Solvents; Substrates; CVD; MoS2; Monolayers; Two-dimensional materials; devices; monolayers; optoelectronics;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2015.2476360
Filename
7258319
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