• DocumentCode
    3605653
  • Title

    Synthesis and Application of Monolayer Semiconductors (June 2015)

  • Author

    Kuan-Chang Chiu ; Xin-Quan Zhang ; Xiaoze Liu ; Menon, Vinod M. ; Yung-Fu Chen ; Jenn-Ming Wu ; Yi-Hsien Lee

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    51
  • Issue
    10
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    Recently, semiconducting monolayers, such as MoS2 and WSe2, have been highlighted for their spin-valley coupling, diverse band structures, bendability, and excellent optoelectronic performances. With a subnanometer thickness of atomic layers, the transition metal dichalcogenides (TMDc) atomic layers demonstrate a significant photoresponse, considerable absorption to incident sunlight and favorable transport performances, leading to applications in the electronic circuit requiring low stand-by power, diverse optoelectronic devices, and next-generation nanoelectronics. Therefore, the class of monolayer TMDc offers a burgeoning field in materials science, fundamental physics, and optoelectronics. A feasible synthetic process to realize controlled synthesis of large area and high quality of TMDc monolayers is in demands. In this review, we will introduce the progress on synthesis and applications of the TMDc atomic layers.
  • Keywords
    band structure; chalcogenide glasses; molybdenum compounds; monolayers; tungsten compounds; MoS2; TMD atomic layers; TMD monolayers; WSe2; bendability; diverse band structures; diverse optoelectronic devices; electronic circuit; monolayer semiconductors; next-generation nanoelectronics; optoelectronic performances; spin-valley coupling; transition metal dichalcogenide atomic layers; transport performances; Annealing; Atomic layer deposition; Crystals; Graphene; Process control; Solvents; Substrates; CVD; MoS2; Monolayers; Two-dimensional materials; devices; monolayers; optoelectronics;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2015.2476360
  • Filename
    7258319