Title :
Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes
Author :
Geonwook Yoo ; Sungho Lee ; Byoungwook Yoo ; Chuljong Han ; Sunkook Kim ; Min Suk Oh
Author_Institution :
Display Convergence Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea
Abstract :
We demonstrate a two-dimensional (2D) multilayered molybdenum disulfide (MoS2) transistor with molybdenum (Mo) side and edge contacts, which is deposited using a dc-sputtering method. It exhibits field-effect mobility of 23.9 cm2/Vs and ON/OFF ratio of 106 in a linear region. A current-voltage study under different temperatures (300-393 K) reveals that the Mo-MoS2 transistor shows a band transport characteristics, and a Schottky barrier height of 0.14 eV is estimated using a thermionic emission theory. Finally, the side and edge contacts of Mo-MoS2 are confirmed through the transmission electron microscope analysis. Our results not only show that Mo can be an alternative contact metal to other low work-function metals but also that the edge contact may play an important role in resolving the performance degradation over thickness increase of the MoS2 channel layer.
Keywords :
Schottky barriers; electrical contacts; electrodes; molybdenum compounds; multilayers; sputter deposition; thermionic emission; transistors; transmission electron microscopy; work function; MoS2; Schottky barrier height; band transport characteristics; contact metal; current-voltage study; dc-sputtering method; edge contacts; electrical contact analysis; field-effect mobility; low work-function metals; molybdenum source/drain electrodes; multilayer transistor; temperature 300 K to 393 K; thermionic emission theory; transmission electron microscope analysis; two-dimensional multilayered molybdenum disulfide transistor side contacts; Contacts; Image edge detection; Iron; Molybdenum; Nonhomogeneous media; Transistors; Contact resistance; Edge contact; MoS2; Molybdenum; Schottky barrier; contact resistance; edge contact;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2478899
