DocumentCode :
3605843
Title :
The 
cm 
Electron Concentration and Low Specific Contact Resistivity of
Author :
Huang, S.-H. ; Lu, F.-L. ; Huang, W.-L. ; Huang, C.-H. ; Liu, C.W.
Author_Institution :
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
36
Issue :
11
fYear :
2015
Firstpage :
1114
Lastpage :
1117
Abstract :
The phosphorus incorporation by chemical vapor deposition and activation by laser annealing reaches the electron concentration of ~3 × 1020 cm-3. The pulsed laser not only activates the phosphorus but also produces the biaxial tensile strain of 0.35%. With the nickel germanide contact, the specific contact resistivity reaches as low as 1.5 × 10-8 Ω-cm2 by greatly reducing the tunneling distance. Due to 4% misfit between Ge and Si, there are still misfit dislocations near the Ge/Si interface. The misfit dislocations at the Ge/Si interface lead to the ideality factor of 1.6 for the Ge/Si hetero-junction diode with ON/OFF ratio of ~1 × 105.
Keywords :
annealing; chemical vapour deposition; dislocations; electrical contacts; electrical resistivity; elemental semiconductors; germanium; laser materials processing; phosphorus; semiconductor doping; tensile strength; tunnelling; biaxial tensile strain; chemical vapor deposition; contact resistivity; electron concentration; laser annealing; misfit dislocations; nickel germanide contact; phosphorus-doping; tunneling; Annealing; Conductivity; Germanium; Nickel; Resistance; Silicon; Germanium; activation; doping; in-situ; phosphorus; specific contact resistivity;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2478916
Filename :
7268877
Link To Document :
