Title :
Modeling and Experiment Verification of Lateral Current Spreading Effect in Ridge Waveguide Electroabsorption Modulators
Author :
Huitao Wang ; Dan Lu ; Hao Wang ; Fei Guo ; Songtao Liu ; Daibing Zhou ; Hongliang Zhu ; Wei Wang ; Yongguang Huang ; Ruikang Zhang ; Chen Ji
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Abstract :
We investigate the lateral current spreading effect and its influences on the transmission characteristics of ridge waveguide electroabsorption modulators. An RF equivalent circuit based on a transmission line model explicitly accounting for this effect is proposed. The equivalent circuit parameters in our model extracted from S11 curve fitting are used to simulate the S21 response (electro-optical response (E/O) response), which matches well with the measured direct S21 small-signal modulation response. The physical significance of our model parameters can be well explained based on the secondary ion mass spectroscopy doping profiling and the simulation of the current spreading effect in our device structure.
Keywords :
electro-optical modulation; equivalent circuits; integrated optics; integrated optoelectronics; optical waveguides; ridge waveguides; secondary ion mass spectroscopy; RF equivalent circuit; S11 curve fitting; S21 response; current spreading effect; direct S21 small-signal modulation response; electro-optical response; lateral current spreading effect; ridge waveguide electroabsorption modulators; secondary ion mass spectroscopy doping profiling; transmission characteristics; transmission line model; Equivalent circuits; Integrated circuit modeling; Modulation; Optical waveguides; Power transmission lines; Radio frequency; Transmission line measurements; Equivalent circuit; lateral current spreading; p-doping; ridge structure electroabsorption modulators (EAMs); transmission line model; transmission line model.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2475375
