Title :
Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers
Author :
Jian Lin ; Poh Choon Ooi ; Fushan Li ; Tailiang Guo ; Tae Whan Kim
Author_Institution :
Inst. of Optoelectron. Display, Fuzhou Univ., Fuzhou, China
Abstract :
Non-volatile memory (NVM) devices using graphene quantum dots (GQDs) as charge trapping sites were fabricated with silver nanowires as top electrodes using solution process. The stacking structure consists of GQDs embedded between polymethylsilsesquioxane layers constructed on transparent flexible substrate. Hysteresis window was observed in the current-voltage plots, and the NVM devices are reprogrammable and stable up to 1 × 104 s with a distinct ON/OFF ratio of 104. In addition, the memory device shows the stable hysteresis window without obvious degradation upon bending under different curvature radii.
Keywords :
electrodes; graphene devices; nanowires; polymers; random-access storage; silver; NVM devices; charge trapping sites; current-voltage plots; embedded graphene quantum dots; hysteresis window; memory device; polymethylsilsesquioxane layers; silver nanowires; solution process; stacking structure; top electrodes; transparent flexible substrate; transparent nonvolatile memory; Dielectrics; Electrodes; Hysteresis; Nonvolatile memory; Polymers; Quantum dots; Substrates; Flexible; Graphene quantum dots; Non-volatile memory; Silver nanowires; flexible; non-volatile memory; silver nanowires;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2480119
