Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

Author

Jian Lin ; Poh Choon Ooi ; Fushan Li ; Tailiang Guo ; Tae Whan Kim

Author_Institution

Inst. of Optoelectron. Display, Fuzhou Univ., Fuzhou, China

Volume

36

Issue

11

fYear

2015

Firstpage

1212

Lastpage

1214

Abstract

Non-volatile memory (NVM) devices using graphene quantum dots (GQDs) as charge trapping sites were fabricated with silver nanowires as top electrodes using solution process. The stacking structure consists of GQDs embedded between polymethylsilsesquioxane layers constructed on transparent flexible substrate. Hysteresis window was observed in the current-voltage plots, and the NVM devices are reprogrammable and stable up to 1 × 10⁴ s with a distinct ON/OFF ratio of 10⁴. In addition, the memory device shows the stable hysteresis window without obvious degradation upon bending under different curvature radii.

Keywords

electrodes; graphene devices; nanowires; polymers; random-access storage; silver; NVM devices; charge trapping sites; current-voltage plots; embedded graphene quantum dots; hysteresis window; memory device; polymethylsilsesquioxane layers; silver nanowires; solution process; stacking structure; top electrodes; transparent flexible substrate; transparent nonvolatile memory; Dielectrics; Electrodes; Hysteresis; Nonvolatile memory; Polymers; Quantum dots; Substrates; Flexible; Graphene quantum dots; Non-volatile memory; Silver nanowires; flexible; non-volatile memory; silver nanowires;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2480119

Filename

7272044