DocumentCode
3606251
Title
designed gaps
Volume
51
Issue
19
fYear
2015
Firstpage
1473
Lastpage
1473
Abstract
III-V semiconductor materials with energy gap as low as 60 MeV have been produced by researchers in the US. The materials demonstrate a virtual substrate technique that allows the structures of these materials to be designed for better IR device performance, rather than being dictated by the application wavelength.
Keywords
III-V semiconductors; energy gap; infrared imaging; lattice constants; semiconductor superlattices; III-V semiconductor materials; IR device performance; LWIR applications; designed gaps; energy gap; lattice constant; virtual substrate technique;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2015.3019
Filename
7272224
Link To Document