Nonvolatile Logic and In Situ Data Transfer Demonstrated in Crossbar Resistive RAM Array

For the first time, nonvolatile logic, memory, and communication are experimentally demonstrated all within a crossbar resistive random access memory (RRAM) array through the state interaction among RRAM cells. With all the array cells initialized to high resistance states, OR and NOT logic are measured as a proof of functional completeness for computation, with input and output data directly stored in the array. Following the same computation paradigm, in situ data transfer within the crossbar RRAM array is realized. The cell-to-cell communication is proved efficient by the measured resistance evolution of a row of RRAM cells during consecutive data transfer. Reliability characteristics, including endurance, retention, and disturbance are scrutinized for the robust computing systems.