DocumentCode :
3606874
Title :
Magnetotunneling Junction Logic and Memory: Low-energy logic paradigms for the next decade and beyond.
Author :
Bandyopadhyay, Supriyo ; Atulasimha, Jayasimha
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Commonwealth Univ., Richmond, VA, USA
Volume :
9
Issue :
4
fYear :
2015
Firstpage :
6
Lastpage :
12
Abstract :
The rapid increase in demand for computational and signal processing prowess calls for radical and revolutionary advances in reliable, energy-efficient, and dense computing architectures. The traditional complementary metal oxide semiconductor (CMOS) field-effect-transistor-based processors are hardly up to the task because of the excessive energy dissipation that they are burdened with and the fact that CMOS is volatile and thereby inherently incapable of storing data indefinitely.
Keywords :
CMOS logic circuits; magnetic tunnelling; microprocessor chips; CMOS field-effect-transistor-based processors; complementary metal oxide semiconductor; dense computing architectures; energy dissipation; energy-efficient architecture; low-energy logic paradigms; magnetotunneling junction logic; signal processing; Energy efficiency; Magnetic domain walls; Magnetic domains; Magnetic separation; Magnetic switching; Magnetic tunneling;
fLanguage :
English
Journal_Title :
Nanotechnology Magazine, IEEE
Publisher :
ieee
ISSN :
1932-4510
Type :
jour
DOI :
10.1109/MNANO.2015.2472659
Filename :
7274692
Link To Document :
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