Generic Electrostatic Discharges Protection Solutions for RF and Millimeter-Wave Applications

Author

Lim, Tekfouy ; Benech, Philippe ; Jimenez, Jean ; Fournier, Jean-Michel ; Heitz, Boris ; Bourgeat, Johan ; Galy, Philippe

Author_Institution

STMicroelectron., Crolles, France

Volume

63

Issue

11

fYear

2015

Firstpage

3747

Lastpage

3759

Abstract

The vertical shrinkage of the advanced CMOS processes thicknesses makes electrostatic discharge (ESD) issues become more significant. RF and millimeter-wave (mm-wave) circuits are very sensitive to the ESD components´ capacitive parasitic effect. Surface area is a key factor as well in an ESD protection circuit for mm-wave applications. This paper presents silicon-verified ESD solutions, which fulfill physical dimensions, ESD robustness, and broadband frequencies requirements.

Keywords

CMOS integrated circuits; electrostatic discharge; millimetre wave integrated circuits; silicon; ESD protection circuit; RF application; advanced CMOS processes; broadband frequency; capacitive parasitic effect; complementary metal oxide semiconductor; generic electrostatic discharges protection solution; millimeter-wave application; mm-wave circuit; radiofrequency circuit; silicon-verified ESD solution; surface area; vertical shrinkage; BiCMOS integrated circuits; Electrostatic discharges; Logic gates; Power transmission lines; Temperature measurement; Transistors; Transmission line measurements; Advanced CMOS technologies; RF; electrostatic discharges (ESDs); millimeter-wave (mm-wave); transmission lines;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2015.2478000

Filename

7275075