Title :
Generic Electrostatic Discharges Protection Solutions for RF and Millimeter-Wave Applications
Author :
Lim, Tekfouy ; Benech, Philippe ; Jimenez, Jean ; Fournier, Jean-Michel ; Heitz, Boris ; Bourgeat, Johan ; Galy, Philippe
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
The vertical shrinkage of the advanced CMOS processes thicknesses makes electrostatic discharge (ESD) issues become more significant. RF and millimeter-wave (mm-wave) circuits are very sensitive to the ESD components´ capacitive parasitic effect. Surface area is a key factor as well in an ESD protection circuit for mm-wave applications. This paper presents silicon-verified ESD solutions, which fulfill physical dimensions, ESD robustness, and broadband frequencies requirements.
Keywords :
CMOS integrated circuits; electrostatic discharge; millimetre wave integrated circuits; silicon; ESD protection circuit; RF application; advanced CMOS processes; broadband frequency; capacitive parasitic effect; complementary metal oxide semiconductor; generic electrostatic discharges protection solution; millimeter-wave application; mm-wave circuit; radiofrequency circuit; silicon-verified ESD solution; surface area; vertical shrinkage; BiCMOS integrated circuits; Electrostatic discharges; Logic gates; Power transmission lines; Temperature measurement; Transistors; Transmission line measurements; Advanced CMOS technologies; RF; electrostatic discharges (ESDs); millimeter-wave (mm-wave); transmission lines;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2015.2478000
