Title :
An Ultra-Low-Voltage CMOS Process-Insensitive Self-Biased OTA With Rail-to-Rail Input Range
Author :
Abdelfattah, Omar ; Roberts, Gordon W. ; Ishiang Shih ; Yi-Chi Shih
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
An operational-transconductance-amplifier (OTA) design for ultra-low voltage ultra-low power applications is proposed. The input stage of the proposed OTA utilizes a bulk-driven pseudo-differential pair to allow minimum supply voltage while achieving a rail-to-rail input range. All the transistors in the proposed OTA operate in the subthreshold region. Using a novel self-biasing technique to bias the OTA obviates the need for extra biasing circuitry and enhances the performance of the OTA. The proposed technique ensures the OTA robustness to process variations and increases design feasibility under ultra-low-voltage conditions. Moreover, the proposed biasing technique significantly improves the common-mode and power-supply rejection of the OTA. To further enhance the bandwidth and allow the use of smaller compensation capacitors, a compensation network based on a damping-factor control circuit is exploited. The OTA is fabricated in a 65 nm CMOS technology. Measurement results show that the OTA provides a low-frequency gain of 46 dB and rail-to-rail input common-mode range with a supply voltage as low as 0.5 V. The dc gain of the OTA is greater than 42 dB for supply voltage as low as 0.35 V. The power dissipation is 182 μW at VDD=0.5 V and 17 μW at VDD=0.35 V.
Keywords :
CMOS integrated circuits; low-power electronics; operational amplifiers; CMOS; OTA; bulk-driven pseudo-differential pair; compensation capacitors; compensation network; damping-factor control circuit; gain 42 dB; gain 46 dB; operational-transconductance-amplifier design; power 17 muW; power 182 muW; power-supply rejection; rail-to-rail input range; size 65 nm; voltage 0.35 V; voltage 0.5 V; CMOS integrated circuits; Gain; Logic gates; MOSFET; Noise; Transconductance; Bulk-driven MOS transistor; common-mode rejection; operational transconductance amplifiers; power-supply rejection; process variations; ultra-low voltage;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2015.2469011