• DocumentCode
    3607079
  • Title

    An Ultra-Low-Voltage CMOS Process-Insensitive Self-Biased OTA With Rail-to-Rail Input Range

  • Author

    Abdelfattah, Omar ; Roberts, Gordon W. ; Ishiang Shih ; Yi-Chi Shih

  • Author_Institution
    Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
  • Volume
    62
  • Issue
    10
  • fYear
    2015
  • Firstpage
    2380
  • Lastpage
    2390
  • Abstract
    An operational-transconductance-amplifier (OTA) design for ultra-low voltage ultra-low power applications is proposed. The input stage of the proposed OTA utilizes a bulk-driven pseudo-differential pair to allow minimum supply voltage while achieving a rail-to-rail input range. All the transistors in the proposed OTA operate in the subthreshold region. Using a novel self-biasing technique to bias the OTA obviates the need for extra biasing circuitry and enhances the performance of the OTA. The proposed technique ensures the OTA robustness to process variations and increases design feasibility under ultra-low-voltage conditions. Moreover, the proposed biasing technique significantly improves the common-mode and power-supply rejection of the OTA. To further enhance the bandwidth and allow the use of smaller compensation capacitors, a compensation network based on a damping-factor control circuit is exploited. The OTA is fabricated in a 65 nm CMOS technology. Measurement results show that the OTA provides a low-frequency gain of 46 dB and rail-to-rail input common-mode range with a supply voltage as low as 0.5 V. The dc gain of the OTA is greater than 42 dB for supply voltage as low as 0.35 V. The power dissipation is 182 μW at VDD=0.5 V and 17 μW at VDD=0.35 V.
  • Keywords
    CMOS integrated circuits; low-power electronics; operational amplifiers; CMOS; OTA; bulk-driven pseudo-differential pair; compensation capacitors; compensation network; damping-factor control circuit; gain 42 dB; gain 46 dB; operational-transconductance-amplifier design; power 17 muW; power 182 muW; power-supply rejection; rail-to-rail input range; size 65 nm; voltage 0.35 V; voltage 0.5 V; CMOS integrated circuits; Gain; Logic gates; MOSFET; Noise; Transconductance; Bulk-driven MOS transistor; common-mode rejection; operational transconductance amplifiers; power-supply rejection; process variations; ultra-low voltage;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2015.2469011
  • Filename
    7277155