Voltage mirror circuit by carbon nanotube field effect transistors for mirroring dynamic random access memories in multiple-valued logic and fuzzy logic

In this paper, a new voltage mirror circuit by using carbon nanotubes (CNTs) technology is presented. This circuit is specifically proposed for the application of duplicating multiple-valued and fuzzy dynamic random access memories. The given structure prevents any voltage drop for the capacitor inside the memory cell. As a result, any fanout circuit can be driven. The new structure can be utilised for different multiple-valued logic systems without a change. The unique characteristics of carbon nanotube field effect transistor (CNFET) technology are exploited in this paper to meet the desired design goals. It demonstrates the potentials of CNFET technology in a realistic very large-scale integration application. The proposed design is highly tolerant to D_CNT variation and it is also immune to misaligned CNTs. Simulation results demonstrate that it provides sufficient driving capability with reasonable accuracy.