Title :
High-Frequency TaOx-Based Compact Oscillators
Author :
Sharma, Abhishek A. ; Yunlu Li ; Skowronski, Marek ; Bain, James A. ; Weldon, Jeffrey A.
Author_Institution :
Electr. & Comput. Eng. Dept., Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
In this paper, we demonstrate three key features of oxide-based nano-oscillators: 1) the observation of threshold switching and filamentary oscillations in TaOx; 2) the highest frequency achieved by oxide-based oscillators; and 3) a study with linear (resistor) and nonlinear (transistor) ballasts to clearly understand the role of filament dynamics in scaling. These oscillators show frequency tunability over the range of 20 kHz-250 MHz, with 250 MHz being the highest reported frequency for this class of oscillators. Different types of ballasts show frequency tunability using two distinct methods: 1) by tuning the channel resistance of the transistor and 2) by increasing the rail voltage across the ballast-device pair. This sheds new light on the oscillator dynamics for dense oscillator arrays aimed at oscillatory neural networks and other applications.
Keywords :
oscillators; tantalum compounds; TaOx; ballast-device pair; channel resistance; dense oscillator array; filament dynamic; filamentary oscillation; frequency 20 kHz to 250 MHz; frequency tunability; high-frequency compact oscillator; linear ballast; nanooscillator; nonlinear ballast; oscillator dynamic; oscillatory neural network; rail voltage; threshold switching; Electronic ballasts; Frequency shift keying; Oscillators; Resistance; Resistors; Transistors; Voltage measurement; One transistor; TaOₓ.; TaOx; compact oscillator; filament dynamics; filament formation; forming; high frequency; metal-insulator transition; metal???insulator transition; one resistor (1T1R); oscillatory neural network (ONN); oxide oscillators; resistive random access memory (RRAM);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2475623
