Noise-Induced Resistance Broadening in Resistive Switching Memory—Part I: Intrinsic Cell Behavior

Author

Ambrogio, Stefano ; Balatti, Simone ; McCaffrey, Vincent ; Wang, Daniel C. ; Ielmini, Daniele

Author_Institution

Dipt. di Elettron., Inf. e Bioingegneria, Politec. di Milano, Milan, Italy

Volume

62

Issue

11

fYear

2015

Firstpage

3805

Lastpage

3811

Abstract

Resistive-switching memory (RRAM) is attracting a widespread interest for its outstanding properties, such as low power, high speed, and good endurance. A crucial concern for RRAM is the current fluctuation, which induces significant broadening of resistance levels in single-bit and multilevel applications. This paper addresses low-frequency fluctuations focusing on 1/f and random telegraph noise contributions in intrinsic, i.e., typical, cells. The current fluctuations are studied in both the time and frequency domains, and the analytical models are presented to predict the resistance broadening for different RRAM states. Finally, the resistance dependence of noise and broadening is studied with the support of a 3-D finite-element model.

Keywords

1/f noise; finite element analysis; resistive RAM; 1/f noise; 3-D finite-element model; RRAM; current fluctuation; intrinsic cell behavior; noise-induced resistance broadening; random telegraph noise; resistive switching memory; 1f noise; Analytical models; Electrical resistance measurement; Resistance; Silicon; Switches; 1/ $f$ noise; 1/f noise; low-frequency noise; memory reliability; random telegraph noise (RTN); reliability modeling; resistive switching memory (RRAM); resistive switching memory (RRAM).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2475598

Filename

7283598