Dynamic Compression of the Signal in a Charge Sensitive Amplifier: From Concept to Design

Author

Manghisoni, Massimo ; Comotti, Daniele ; Gaioni, Luigi ; Ratti, Lodovico ; Re, Valerio

Author_Institution

Dipt. di Ing. e Sci. Applicate, Univ. di Bergamo, Dalmine, Italy

Volume

62

Issue

5

fYear

2015

Firstpage

2318

Lastpage

2326

Abstract

This work is concerned with the design of a low-noise Charge Sensitive Amplifier featuring a dynamic signal compression based on the non-linear features of an inversion-mode MOS capacitor. These features make the device suitable for applications where a non-linear characteristic of the front-end is required, such as in imaging instrumentation for free electron laser experiments. The aim of the paper is to discuss a methodology for the proper design of the feedback network enabling the dynamic signal compression. Starting from this compression solution, the design of a low-noise Charge Sensitive Amplifier is also discussed. The study has been carried out by referring to a 65 nm CMOS technology.

Keywords

CMOS integrated circuits; MOS capacitors; low noise amplifiers; CMOS technology; dynamic signal compression; feedback network; inversion-mode MOS capacitor; low-noise charge sensitive amplifier; nonlinear characteristic; nonlinear features; size 65 nm; CMOS integrated circuits; Capacitance; Detectors; Logic gates; MOS devices; Sensitivity; Threshold voltage; CMOS; dynamic signal compression; front-end;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2015.2477461

Filename

7286866