DocumentCode :
3607522
Title :
A 14 b 35 MS/s SAR ADC Achieving 75 dB SNDR and 99 dB SFDR With Loop-Embedded Input Buffer in 40 nm CMOS
Author :
Kramer, Martin J. ; Janssen, Erwin ; Doris, Kostas ; Murmann, Boris
Author_Institution :
Stanford Univ., Stanford, CA, USA
Volume :
50
Issue :
12
fYear :
2015
Firstpage :
2891
Lastpage :
2900
Abstract :
This paper presents a 14 bit 35 MS/s successive approximation register (SAR) ADC that achieves a nearly constant 74.5 dB peak SNDR up to Nyquist and an SFDR of 90/99 dB for inputs near Nyquist and at low-frequencies, respectively. The ADC employs a loop-embedded input buffer that shields the large sampling capacitor from the input and thereby eases the ADC drive requirements significantly. Since the buffer´s nonlinearity is cancelled by the SAR operation, a pair of basic source followers can be used, adding only 12.5 mW (23% of the total power) to the power budget. The ADC includes a bandgap reference and a self-calibrated current steering DAC to close the SAR loop, which eliminates the need for a low-impedance off-chip reference. The design occupies 0.236 mm 2 in 40 nm CMOS and consumes a total power of 54.5 mW from its 1.2/2.5 V supplies, leading to an SNDR-based Schreier FOM of 159.5 dB at Nyquist.
Keywords :
CMOS integrated circuits; analogue-digital conversion; buffer circuits; capacitors; digital-analogue conversion; CMOS technology; SAR ADC; SFDR; SNDR; bandgap reference; loop-embedded input buffer; low-impedance off-chip reference; noise figure 159.5 dB; noise figure 75 dB; noise figure 90 dB; noise figure 99 dB; power 12.5 mW; power 54.5 mW; sampling capacitor; self-calibrated current steering DAC; size 40 nm; source follower; successive approximation register; voltage 1.2 V; voltage 2.5 V; word length 14 bit; Approximation methods; CMOS integrated circuits; Capacitance; Distortion; Integrated circuit modeling; Noise; Resistors; Analog-to-digital conversion; CMOS; SAR; buffer amplifier; calibration; current steering DAC; redundancy; sampling; successive approximation register;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2015.2463110
Filename :
7287803
Link To Document :
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