• DocumentCode
    3607607
  • Title

    Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density

  • Author

    Quang Ho Luc ; Huy Binh Do ; Minh Thien Huu Ha ; Hu, Chenming Calvin ; Yueh Chin Lin ; Chang, Edward Yi

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    36
  • Issue
    12
  • fYear
    2015
  • Firstpage
    1277
  • Lastpage
    1280
  • Abstract
    The impact of in situ plasma-enhanced atomic layer deposition passivation on the electrical properties of HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) has been studied. Excellent interface quality of high-k/III-V is achieved by aluminum nitride (AlN) interfacial passivation layer, including strong inversion behaviors and unpinned Fermi level. The band alignment of HfO2/AlN/In0.53Ga0.47As structure with the valence band offsets of 2.81 ± 0.1 eV and the conduction band offsets of 1.9 ± 0.1 eV was obtained. Better interface and optimized high-k dielectric qualities are achieved using post remote-plasma treatment with either N2/H2 or NH3 gases. Sub-nanometer equivalent oxide thickness HfO2/AlN/In0.53Ga0.47As MOSCAPs with low interface trap density and low leakage current density have been characterized.
  • Keywords
    Fermi level; III-V semiconductors; MOS capacitors; aluminium compounds; atomic layer deposition; conduction bands; current density; gallium arsenide; hafnium compounds; high-k dielectric thin films; indium compounds; interface states; leakage currents; passivation; valence bands; HfO2-AlN-In0.53Ga0.47As; aluminum nitride; band alignment; conduction band; electrical properties; high-k-III-V; interfacial passivation layer; low interface trap density; low leakage current density; metal-oxide-semiconductor capacitors; optimized high-k dielectric qualities; passivated MOSCAP; plasma enhanced atomic layer deposition; strong inversion behaviors; sub-nanometer equivalent oxide thickness; unpinned Fermi level; valence band; Aluminum nitride; Atomic layer deposition; Capacitance-voltage characteristics; Hafnium oxide; III-V semiconductor materials; Indium gallium arsenide; Passivation; AlN; HfO2; In0.53Ga0.47As; MOSCAP; plasma enhanced atomic layer deposition; remote-plasma treatment;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2486771
  • Filename
    7289375
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3607607