• DocumentCode
    3607671
  • Title

    Microstrip slow-wave line for phase shifting cells

  • Author

    Gastaldi, M. ; Dragomirescu, D. ; Takacs, A. ; Armengaud, V. ; Rochette, S.

  • Author_Institution
    LAAS, Toulouse, France
  • Volume
    51
  • Issue
    20
  • fYear
    2015
  • Firstpage
    1589
  • Lastpage
    1591
  • Abstract
    The design, simulation and measurements of microstrip slow-wave lines implemented in a 0.25 μm SiGe bipolar CMOS (BiCMOS) process is addressed for Ku-band (10-15 GHz) applications. The simulation results and the measurements show better performances for the proposed microstrip slow-wave line compared with the classical microstrip transmission line. These lines present very low insertion losses and a high phase constant.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; microstrip lines; microwave phase shifters; slow wave structures; BiCMOS process; Ku-band; SiGe; bipolar complementary metal oxide semiconductor; frequency 10 GHz to 15 GHz; insertion loss; microstrip slow wave line; microstrip transmission line; phase constant; phase shifting cell; size 0.25 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2015.2148
  • Filename
    7289522
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3607671