• DocumentCode
    3607707
  • Title

    Experimental Demonstration of p-Channel Germanium Epitaxial Tunnel Layer (ETL) Tunnel FET With High Tunneling Current and High ON/OFF Ratio

  • Author

    Pei-Yu Wang ; Bing-Yue Tsui

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    36
  • Issue
    12
  • fYear
    2015
  • Firstpage
    1264
  • Lastpage
    1266
  • Abstract
    A CMOS process compatible p-channel tunnel field-effect transistor (TFET) with an epitaxial tunnel layer (ETL) structure is demonstrated experimentally. The fabricated ETL p-TFET exhibits high tunneling current (ION ~ 0.17 μA/μm at |VG| = 0.5 V after VTH adjustment), ultra-low OFF-state current, and good average subthreshold swing (S.S. ~100 mV/ decade up to 10 nA/μm). Overall performance exceeds that of the current state-of-the-art Ge-based planar p-TFETs.
  • Keywords
    elemental semiconductors; epitaxial layers; field effect transistors; germanium; tunnel transistors; CMOS process; ETL p-TFET; ETL structure; Ge; p-channel germanium epitaxial tunnel layer; p-channel tunnel field-effect transistor; planar p-TFET; subthreshold swing; tunneling current; voltage 0.5 V; Epitaxial layers; Logic gates; TFETs; Temperature dependence; Tunneling; Tunnel field-effect transistor; band to band tunneling; subthreshold swing (S.S.); tunnel field-effect transistor;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2487563
  • Filename
    7293092
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3607707