Title :
Experimental Demonstration of p-Channel Germanium Epitaxial Tunnel Layer (ETL) Tunnel FET With High Tunneling Current and High ON/OFF Ratio
Author :
Pei-Yu Wang ; Bing-Yue Tsui
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A CMOS process compatible p-channel tunnel field-effect transistor (TFET) with an epitaxial tunnel layer (ETL) structure is demonstrated experimentally. The fabricated ETL p-TFET exhibits high tunneling current (ION ~ 0.17 μA/μm at |VG| = 0.5 V after VTH adjustment), ultra-low OFF-state current, and good average subthreshold swing (S.S. ~100 mV/ decade up to 10 nA/μm). Overall performance exceeds that of the current state-of-the-art Ge-based planar p-TFETs.
Keywords :
elemental semiconductors; epitaxial layers; field effect transistors; germanium; tunnel transistors; CMOS process; ETL p-TFET; ETL structure; Ge; p-channel germanium epitaxial tunnel layer; p-channel tunnel field-effect transistor; planar p-TFET; subthreshold swing; tunneling current; voltage 0.5 V; Epitaxial layers; Logic gates; TFETs; Temperature dependence; Tunneling; Tunnel field-effect transistor; band to band tunneling; subthreshold swing (S.S.); tunnel field-effect transistor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2487563
