Title :
A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics
Author :
Betti Beneventi, Giovanni ; Reggiani, Susanna ; Gnudi, Antonio ; Gnani, Elena ; Alian, Alireza ; Collaert, Nadine ; Mocuta, Anda ; Thean, Aaron ; Baccarani, Giorgio
Author_Institution :
Dept. of Electr., Electron. & Inf. Eng., Univ. of Bologna, Bologna, Italy
Abstract :
A simple analytical low-field electron mobility model to be employed for technology computer-aided design of thin-body MOSFETs based on III-V compound semiconductors is presented. The scattering sources accounted for in the model are Coulomb centers, lattice vibrations (i.e., phonons), and surface roughness. The dependence of the thin-body effective thickness on the transverse electric field is calculated through 1-D Schrödinger-Poisson numerical simulations and is introduced in the model by means of an appropriate analytical function. Then, the free-electron density distribution is determined by considering both quantization effects and oxide-semiconductor interface traps. The model is calibrated on the experimental data collected on In0.53Ga0.47As-on-InP thin-body MOSFETs featuring body thicknesses as low as 5 nm. In particular, the model accurately reproduces CG-VGS characteristics, effective mobility against inversion layer charge plots, and IDS-VGS curves at low VDS.
Keywords :
III-V semiconductors; MOSFET; Poisson equation; Schrodinger equation; calibration; electron density; electron mobility; gallium arsenide; indium compounds; interface states; lattice dynamics; semiconductor device models; surface roughness; technology CAD (electronics); 1-D Schrödinger-Poisson numerical simulation; Coulomb center; III-V compound semiconductor; In0.53Ga0.47As; InGaAs; InP; TCAD; experimental characteristic; free-electron density distribution; lattice vibration; low-field electron mobility model; oxide-semiconductor interface trap; quantization effect; scattering source; surface roughness; technology computer-aided design; thin-body MOSFET calibration; transverse electric field; Analytical models; Computational modeling; III-V semiconductor materials; Indium phosphide; MOSFET; Mathematical model; Semiconductor device modeling; III-V MOSFET; InGaAs; Silicon-On-Insulator (SOI); border traps; mobility; modeling; semiconductor device simulation; technology computer-aided design (TCAD); technology computer-aided design (TCAD).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2478847
