Title :
Capacitance Modeling in III–V FinFETs
Author :
Yadav, Chandan ; Duarte, Juan Pablo ; Khandelwal, Sourabh ; Agarwal, Amit ; Chenming Hu ; Chauhan, Yogesh Singh
Author_Institution :
Dept. of Electr. Eng., IIT Kanpur, Kanpur, India
Abstract :
We present a physics-based model of charge density and capacitance for III-V channel double-gate nMOSFETs. The developed model accurately accounts for the impact of quantum capacitance on gate capacitance with applied gate voltage including the steplike behavior with sub-band population. The presented model is in excellent agreement with the self-consistent Schrödinger-Poisson simulation data of InGaAs channel double-gate MOSFET.
Keywords :
III-V semiconductors; MOSFET; Poisson equation; Schrodinger equation; gallium arsenide; indium compounds; semiconductor device models; III-V FinFET; III-V channel double-gate nMOSFET; InGaAs; capacitance modeling; charge density; quantum capacitance; self-consistent Schrödinger-Poisson simulation data; Data models; FinFETs; Logic gates; Mathematical model; Quantum capacitance; Fermi-Dirac statistics; Fermi???Dirac statistics; FinFETs; III-V; III???V; quantum capacitance; quantum capacitance.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2480380
