DocumentCode :
3608029
Title :
Erratum to “Temperature Dependence of the Elastic Constants of Doped Silicon” [Jun 15 730-741]
Author :
Ng, Eldwin J. ; Hong, Vu A. ; Yang, Yushi ; Ahn, Chae Hyuck ; Everhart, Camille L. M. ; Kenny, Thomas W.
Author_Institution :
Department of Mechanical Engineering, Stanford University, Stanford, CA, USA
Volume :
24
Issue :
6
fYear :
2015
Firstpage :
2178
Lastpage :
2178
Abstract :
There is an error in one set of values listed in Table III, page 735. The cell in the 4th row from the bottom (Ring <110>) and rightmost column (P6.6) should read “-3.05 / -58.10 / 19.46”, not “-58.10 / -30.99 / 19.46”.
Keywords :
Doping; Elasticity; Elemental semiconductors; Finite element analysis; Silicon; Temperature dependence;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2015.2483373
Filename :
7295543
Link To Document :
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