High-Performance RF Inductors and Capacitors Using the Reverse Trench Structure of Silicon

Author

Jong-Min Yook ; Dongsu Kim ; Jun Chul Kim

Author_Institution

Dept. of Electr. Packaging Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea

Volume

25

Issue

11

fYear

2015

Firstpage

709

Lastpage

711

Abstract

We propose new passive device structures using deep silicon trenches. High-aspect-ratio reverse trench structures coated with copper can be used to make signal lines of the spiral inductor, and a deep trench around the MIM capacitor can be used as a signal isolation wall after back-side thinning. A laminated organic is used to fill the trench. It is possible to make a 10:1 ratio metal pattern maximally, and all signal lines are fixed and isolated due to the laminated organic. Though the spiral inductor is realized on lossy silicon, its Q-factor is higher than 40 at 2 GHz. The fabricated 0.9 GHz LPF adjusting the reverse trench process has only 0.5 dB insertion loss with a very small size.

Keywords

MIM devices; low-pass filters; passive networks; radiofrequency integrated circuits; LPF; MIM capacitor; RF capacitors; RF inductors; Si; back-side thinning; deep silicon trenches; frequency 0.9 GHz; frequency 2 GHz; loss 0.5 dB; passive device structure; reverse trench structure; spiral inductor; Capacitors; Inductors; MIM capacitors; Metals; Radio frequency; Silicon; Spirals; 0.9 GHz low-pass filter (LPF); High-Q inductor; integrated passive device (IPD); reverse trench;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2015.2479841

Filename

7295633