DocumentCode :
3608220
Title :
High-temperature electromechanical characterization of AlN single crystals
Author :
Taeyang Kim ; Jinwook Kim ; Dalmau, Rafael ; Schlesser, Raoul ; Preble, Edward ; Xiaoning Jiang
Author_Institution :
Dept. of Mech. & Aerosp. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume :
62
Issue :
10
fYear :
2015
fDate :
10/1/2015 12:00:00 AM
Firstpage :
1880
Lastpage :
1887
Abstract :
Hexagonal AlN is a non-ferroelectric material and does not have any phase transition up to its melting point (>2000°C), which indicates the potential use of AlN for high-temperature sensing. In this work, the elastic, dielectric, and piezoelectric constants of AlN single crystals were investigated at elevated temperatures up to 1000°C by the resonance method. We used resonators of five different modes to obtain a complete set of material constants of AlN single crystals. The electrical resistivity of AlN at elevated temperature (1000°C) was found to be greater than 5 × 1010 Ω · cm. The resonance cm. frequency of the resonators, which was mainly determined by the elastic compliances, decreased linearly with increasing temperature, and was characterized by a relatively low temperature coefficient of frequency, in the range of -20 to -36 ppm/°C. For all the investigated resonator modes, the elastic constants and the electromechanical coupling factors exhibited excellent temperature stability, with small variations over the full temperature range, <;11.2% and <;17%, respectively. Of particular significance is that due to the pyroelectricity of AlN, both the dielectric and the piezoelectric constants had high thermal resistivity even at extreme high temperature (1000°C). Therefore, high electrical resistivity, temperature independence of electromechanical properties, as well as high thermal resistivity of the elastic, dielectric, and piezoelectric properties, suggest that AlN single crystals are a promising candidate for high-temperature piezoelectric sensing applications.
Keywords :
III-V semiconductors; aluminium compounds; crystal resonators; elastic constants; elasticity; electrical resistivity; high-temperature effects; melting point; permittivity; piezoelectricity; pyroelectricity; thermal conductivity; wide band gap semiconductors; AlN; aluminum nitride single crystals; dielectric constants; dielectric properties; elastic constants; elastic properties; electrical resistivity; electromechanical coupling factors; electromechanical properties; elevated temperature; hexagonal aluminum nitride; high thermal resistivity; high-temperature effects; high-temperature electromechanical characterization; high-temperature piezoelectric sensing applications; low temperature coefficient; material constants; melting point; nonferroelectric material; phase transition; piezoelectric constants; piezoelectric properties; piezoelectric resonators; pyroelectricity; resonance frequency; resonance method; resonator modes; temperature stability; Aluminum nitride; Crystals; III-V semiconductor materials; Resonant frequency; Temperature; Temperature measurement; Temperature sensors;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2015.007252
Filename :
7296776
Link To Document :
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