• DocumentCode
    3608304
  • Title

    Overshoot Stress on Ultra-Thin HfO2 High- \\kappa Layer and Its Impact on Lifetime Extraction

  • Author

    Guangxing Wan ; Tianli Duan ; Shuxiang Zhang ; Lingli Jiang ; Bo Tang ; Yan, J. ; Chao Zhao ; Huilong Zhu ; Hongyu Yu

  • Author_Institution
    South Univ. of Sci. & Technol. of China, Shenzhen, China
  • Volume
    36
  • Issue
    12
  • fYear
    2015
  • Firstpage
    1267
  • Lastpage
    1270
  • Abstract
    Overshoot stress (stimulating the actual IC operating condition) on an ultra-thin HfO2 (EOT~0.8 nm) high-κ layer is investigated, which reveals that overshoot is of great importance to high-κ layer leakage degradation. The dynamic stress-induced leakage current is correlated with traps generation and recovery, which is dependent on stress input and release. A degradation model based on the oxygen vacancies is proposed to interpret the experimental observation.
  • Keywords
    hafnium compounds; leakage currents; oxygen; HfO2; IC; dynamic stress-induced leakage current; leakage degradation; lifetime extraction; size 0.8 nm; ultra-thin high-κ layer; Degradation; Hafnium oxide; High K dielectric materials; Leakage currents; Logic gates; Stress; High- $kappa $ dielectric; High-κ dielectric; SILC; overshoot; pulse stress;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2490719
  • Filename
    7298368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3608304