Title :
Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection
Author :
Min Ren ; Xiaoguang Zheng ; Yaojia Chen ; Xiao Jie Chen ; Johnson, Erik B. ; Christian, James F. ; Campbell, Joe C.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
We report Al0.8Ga0.2As recessed-window single-photon avalanche photodiodes with high internal single-photon detection efficiency and low dark count probability. External quantum efficiency was increased by a factor of 2 at λ = 405 nm. Annealing in arsine with hydrogen carrier gas reduced the dark count probability by a factor of 100, to ~10-6/gate with a ~5 ns gate, at room temperature. The activation energies of primary carrier traps, which give rise to afterpulsing, are extracted in a temperature range from 150 to 200 K.
Keywords :
III-V semiconductors; aluminium compounds; annealing; avalanche photodiodes; electron traps; gallium arsenide; integrated optoelectronics; Al0.8Ga0.2As; activation energy; afterpulsing; annealing; arsine; avalanche photodiodes; external quantum efficiency; high internal single-photon detection efficiency; hydrogen carrier gas; low dark count probability; primary carrier traps; recessed-window single-photon avalanche photodiodes; room temperature; temperature 150 K to 200 K; temperature 293 K to 298 K; wavelength 405 nm; Annealing; Avalanche photodiodes; Gallium arsenide; Logic gates; Passivation; Photonics; Yttrium; Avalanche photodiodes; afterpulsing; photodetectors; single photon avalanche photodiodes;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2015.2491648
