Title :
Integrated a-Si:H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses
Author :
Zhijin Hu ; Congwei Liao ; Wenjie Li ; Limei Zeng ; Chang-Yeh Lee ; Shengdong Zhang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
A hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) gate driver on array with low-level holding TFTs (LLH TFTs) biased under bipolar pulse is investigated. It is shown that the bipolar bias at low frequency significantly alleviates the threshold voltage shift of the LLH TFTs. As a result, the lifetime of the proposed gate driver is demonstrated to be several times of that under the conventional unipolar pulse bias. In addition, the improvement in the lifetime becomes more significant at the higher work temperature. The liquid crystal display television panels (32-in, 1366 × RGB × 768) with the proposed a-Si:H gate drivers integrated on array are manufactured, and the feasibility of the proposed driving scheme is well verified.
Keywords :
amorphous semiconductors; driver circuits; elemental semiconductors; liquid crystal displays; silicon; thin film transistors; Si:H; bipolar bias; bipolar pulse; hydrogenated amorphous silicon; integrated a-Si:H gate driver; liquid crystal display television panels; low-level holding TFT; thin-film transistor; threshold voltage shift; unipolar pulse bias; Amorphous silicon; Stress; Stress measurement; Temperature measurement; Thin film transistors; Threshold voltage; Amorphous silicon (a-Si); bipolar pulse; gate driver; lifetime; threshold voltage shift ( $Delta V_{mathrm {TH}}$ ); threshold voltage shift (Δ VTH).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2487836
