Title :
A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors
Author :
Guangwei Xu ; Wei Wang ; Long Wang ; Zhiwei Zong ; Congyan Lu ; Lingfei Wang ; Banerjee, Writam ; Zhuoyu Ji ; Hong Wang ; Ling Li ; Ming Liu
Author_Institution :
Lab. of Nanofabrication & Novel Devices Integration Technol., Inst. of Microelectron., Beijing, China
Abstract :
In this paper, a surface potential-based gate-leakage current (GLC) model for organic thin-film transistors is proposed. It is found that the Poole-Frenkel emission is the main mechanism of GLC, which can be well described by our model for both accumulation and depletion modes. In addition, the source and drain partitions of the channel leakage current can be well explained based on our model. Furthermore, the dependence of GLC on drain voltage, temperature, and material disorder has been discussed in detail, which yields perfect agreement with the experimental data.
Keywords :
Poole-Frenkel effect; leakage currents; semiconductor device models; surface potential; thin film transistors; Poole-Frenkel emission; accumulation mode; channel leakage current; depletion mode; drain partition; gate leakage current model; organic thin film transistors; source partition; surface potential; Leakage currents; Microelectronics; Organic thin film transistors; Semiconductor device modeling; Gate-leakage current (GLC); Poole-Frenkel emission; Poole???Frenkel emission; organic thin-film transistors (OTFTs); surface potential; surface potential.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2487282
