New a-IGZO Pixel Circuit Composed of Three Transistors and One Capacitor for Use in High-Speed-Scan AMOLED Displays

Author

Chih-Lung Lin ; Fu-Hsing Chen ; Chia-Che Hung ; Po-Syun Chen ; Ming-Yang Deng ; Chun-Ming Lu ; Tzuen-Hsi Huang

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

11

Issue

12

fYear

2015

Firstpage

1031

Lastpage

1034

Abstract

An amorphous indium-gallium-zinc-oxide (a-IGZO) pixel circuit with three transistors and one capacitor is proposed for use in high-speed-scan active-matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit can compensate for the threshold voltage shifts in both normally-off and normally-on a-IGZO TFTs. Based on the simulation results with ±1 V threshold voltage shifts of the driving TFT, the relative error rates of OLED currents are less than 4.46% for the entire range of data voltages (-9.9 V ~ 5 V).

Keywords

LED displays; driver circuits; organic light emitting diodes; thin film transistors; InGaZnO; high speed scan AMOLED displays; pixel circuit; threshold voltage shift compensation; transistor circuit; Active matrix organic light emitting diodes; Capacitors; Thin film transistors; Three-dimensional displays; Threshold voltage; Yttrium; Active-matrix organic light-emitting diode (AMOLED); amorphous indium-gallium-zinc-oxide (a-IGZO); high-speed-scan;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2015.2494064

Filename

7303874