DocumentCode :
3608889
Title :
Sezawa Propagation Mode in GaN on Si Surface Acoustic Wave Type Temperature Sensor Structures Operating at GHz Frequencies
Author :
Muller, Alexandru ; Giangu, Ioana ; Stavrinidis, Antonis ; Stefanescu, Alexandra ; Stavrinidis, George ; Dinescu, Adrian ; Konstantinidis, George
Author_Institution :
Nat. Inst. for R&D in Microtechnologies, Bucharest, Romania
Volume :
36
Issue :
12
fYear :
2015
Firstpage :
1299
Lastpage :
1302
Abstract :
This letter investigates the applicability of Sezawa propagation mode for various GaN/Si surface acoustic wave (SAW) temperature sensor structures. First, different acoustic propagation modes in GaN on Si single SAW resonators, operating at GHz frequencies, were evaluated. The variation of the phase velocity versus the normalized thickness of the GaN layer is analyzed experimentally for different propagation modes, on the SAW structures manufactured using e-beam lithography. The different acoustic modes were also identified using finite-element method calculations. The effective coupling coefficients for the Sezawa mode are determined and show larger values than those obtained for the Rayleigh mode. The sensitivities obtained for the temperature sensor structures are 1.8 times higher for Sezawa than for the fundamental Rayleigh mode.
Keywords :
III-V semiconductors; acoustic wave propagation; electron beam lithography; elemental semiconductors; finite element analysis; gallium compounds; silicon; surface acoustic wave sensors; temperature measurement; temperature sensors; wide band gap semiconductors; GaN-Si; SAW temperature sensor structure; Sezawa propagation mode; acoustic propagation mode; e-beam lithography; effective coupling coefficient; finite element method calculation; fundamental Rayleigh mode; phase velocity; single SAW resonator; surface acoustic wave type temperature sensor structure; Gallium nitride; Resonant frequency; Silicon; Surface acoustic wave devices; Surface acoustic waves; Temperature sensors; Resonance; Surface acoustic wave devices; resonance;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2494363
Filename :
7305747
Link To Document :
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