Multi-wavelength channel 1.5 μm and 10 Gb/s EMBH DFB-LD array module using SAG technology

Author

Kwon, O.K. ; Oh, S.H. ; Kim, K.S. ; Lee, C.W. ; Leem, Y.A. ; Nam, E.S.

Author_Institution

Photonic-Wireless Convergence Components Res. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

Volume

51

Issue

22

fYear

2015

Firstpage

1771

Lastpage

1772

Abstract

A multi-wavelength channel distributed feedback laser diode array (DFB-LDA) for the low-cost and low-power consumption applications of WDM-based datacentre networks is reported. The gain spectrum and lasing wavelength of each channel are controlled by using selective area growth and E-beam lithography techniques, respectively. To reduce the operation current and parasitic capacitance of the proposed array, an etched mesa buried hetero-structure (EMBH) is introduced. From this study, it was found that an eight-channel 300 μm long λ/4-shifted DFB-LDA has a threshold current of 10 ± 1.5 mA and a side mode suppression ratio of over 50 dB at a current of 50 mA for all channels. A transmission test for this LDA showed a clear eye opening with a dynamic extinction ratio of over 4.5 dB at 10 Gb/s after a 2 km transmission.

Keywords

computer centres; electron beam lithography; optical communication equipment; optical testing; semiconductor laser arrays; telecommunication channels; wavelength division multiplexing; E-beam lithography; EMBH DFB-LD array module; SAG technology; WDM-based datacentre networks; bit rate 10 Gbit/s; clear eye opening; current 50 mA; distance 2 km; distributed feedback laser diode array; dynamic extinction ratio; etched mesa buried heterostructure; gain spectrum; lasing wavelength; multiwavelength channel; operation current and parasitic capacitance; selective area growth; side mode suppression; threshold current; transmission test; wavelength 1.5 mum;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2015.3000

Filename

7308099