• DocumentCode
    3609116
  • Title

    Design guidelines of tunnelling field-effect transistors for the suppression of work-function variation

  • Author

    Choi, W.Y.

  • Author_Institution
    Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
  • Volume
    51
  • Issue
    22
  • fYear
    2015
  • Firstpage
    1819
  • Lastpage
    1821
  • Abstract
    Design guidelines to suppress the work-function variation (WFV) effects of tunnelling field-effect transistors (TFETs) have been discussed in comparison with metal-oxide-semiconductor FETs for the first time. The effects of metal-gate materials and their grain size on the WFV have been investigated. The simulation results show that the selection of appropriate gate material and the reduction of metal grain size are the effective solutions to the WFV of TFETs.
  • Keywords
    field effect transistors; tunnel transistors; work function; MOSFET; TFET; WFV effect; metal grain size reduction; metal-gate material; metal-oxide-semiconductor field effect transistor; tunnelling field-effect transistor; work-function variation suppression;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2015.2625
  • Filename
    7308101
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3609116