Title :
Ohmic contacts to n-type GaN layer using ECR-sputtered AlN interfacial layer
Author :
Terano, A. ; Takei, A. ; Tanaka, S. ; Tsuchiya, T.
Author_Institution :
R&D Group, Hitachi Ltd., Kokubunji, Japan
Abstract :
Ohmic contacts to an n-type GaN layer using an electron cyclotron resonance (ECR)-sputtered AlN (thickness of 3 nm)/Ti/Pt/Au electrode without an Al metal layer were investigated. Ohmic characteristics were achieved when annealed at a temperature of 400°C or more. Contact resistance reached a minimum (7.67 × 10-1 Ω-mm) at an annealing temperature of 500°C.
Keywords :
III-V semiconductors; aluminium compounds; annealing; contact resistance; electrodes; gallium compounds; gold; ohmic contacts; platinum; semiconductor-metal boundaries; sputtered coatings; titanium; wide band gap semiconductors; AlN-Ti-Pt-Au; ECR-sputtering; GaN; annealing; contact resistance; electrode; electron cyclotron resonance sputtering; interfacial layer; n-type gallium nitride layer; ohmic characteristics; ohmic contact; temperature 400 C; temperature 500 C;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.2037
