Title :
High-power up to 4 W characteristics of the capacitive microwave power sensor with grounded beam
Author :
Hao Yan ; Xiaoping Liao
Author_Institution :
Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
Abstract :
The high-power up to 4 W characteristic of a capacitive microwave power sensor with grounded MEMS beam is investigated. This device is fabricated by GaAs MMIC (microwave monolithic integrated circuit) technology. Experimental results indicate that the sensitivity of power sensor gradually degenerates with input power increasing continually. The measurement results are divided into three regions: pre-saturated, saturated and over-saturated regions. The corresponding sensitivities are 0.95, 0.76 and 0.56 fF/W at 10 GHz, respectively. This effect is caused by the device´s capacitive mismatch at high-power, and the modified formula is calculated in sections.
Keywords :
III-V semiconductors; MMIC; capacitance measurement; capacitive sensors; gallium arsenide; microsensors; microwave detectors; microwave measurement; power measurement; GaAs; MMIC technology; capacitive microwave power sensor; frequency 10 GHz; grounded MEMS beam; microwave monolithic integrated circuit technology; over-saturated region; pre-saturated region; saturated region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.2844
