DocumentCode
3609513
Title
Hysteresis and Oscillation in High-Efficiency Power Amplifiers
Author
de Cos, Jesus ; Suarez, Almudena ; Garcia, Jose A.
Author_Institution
Commun. Eng. Dept., Univ. of Cantabria, Santander, Spain
Volume
63
Issue
12
fYear
2015
Firstpage
4284
Lastpage
4296
Abstract
Hysteresis in power amplifiers (PAs) is investigated in detail with the aid of an efficient analysis method, compatible with commercial harmonic balance. Suppressing the input source and using, instead, an outer-tier auxiliary generator, together with the Norton equivalent of the input network, analysis difficulties associated with turning points are avoided. The turning-point locus in the plane defined by any two relevant analysis parameters is obtained in a straightforward manner using a geometrical condition. The hysteresis phenomenon is demonstrated to be due to a nonlinear resonance of the device input capacitance under near optimum matching conditions. When increasing the drain bias voltage, some points of the locus degenerate into a large-signal oscillation that cannot be detected with a stability analysis of the dc solution. In driven conditions, the oscillation will be extinguished either through synchronization or inverse Hopf bifurcations in the upper section of the multivalued curves. For an efficient stability analysis, the outer-tier method will be applied in combination with pole-zero identification and Hopf-bifurcation detection. Departing from the detected oscillation, a slight variation of the input network will be carried out so as to obtain a high-efficiency oscillator able to start up from the noise level. All the tests have been carried out in a Class-E GaN PA with measured 86.8% power-added efficiency and 12.4-W output power at 0.9 GHz.
Keywords
III-V semiconductors; UHF power amplifiers; bifurcation; circuit stability; gallium compounds; hysteresis; nonlinear network analysis; poles and zeros; synchronisation; wide band gap semiconductors; Class-E GaN PA; GaN; Hopf-bifurcation detection; Norton equivalent; drain bias voltage; geometrical condition; high-efficiency power amplifiers; hysteresis; input network; inverse Hopf bifurcations; large-signal oscillation; near optimum matching conditions; nonlinear resonance; outer-tier auxiliary generator; pole-zero identification; stability analysis; synchronization; turning-point locus; Capacitance; Capacitors; Harmonic analysis; Hysteresis; Logic gates; Oscillators; Turning; Bifurcation; GaN; UHF; class-E; harmonic balance (HB); hysteresis; power amplifier (PA); stability;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2015.2492968
Filename
7312508
Link To Document