Title :
Atomistic Modeling of Suspended Carbon Nanotube Field Effect Transistors Under Proton Radiation
Author :
LaGasse, Samuel W. ; Cress, Cory D. ; Hughes, Harold L. ; Ji Ung Lee
Author_Institution :
Coll. of Nanoscale Sci. & Eng., SUNY Polytech. Inst., Albany, NY, USA
Abstract :
We present an atomistic model explaining spontaneous reductions of source-drain current in suspended carbon nanotube field effect transistors (CNT FETs) under proton irradiation. The non-equilibrium Green´s function (NEGF) method is used to investigate the local density of states (LDOS) and transfer characteristics of the device. Our model suggests that ionized gas species within 20 nm of the CNT FET will act as an electrostatic gate, reducing current in the device for low back-gate voltages.
Keywords :
Green´s function methods; carbon nanotube field effect transistors; field effect transistors; ionisation; radiation effects; semiconductor device models; C; CNT FET; LDOS; NEGF method; atomistic modeling; back-gate voltages; electrostatic gate; ionized gas species; local density of states; nonequilibrium Green´s function method; proton irradiation; size 20 nm; source-drain current; suspended carbon nanotube field effect transistors; Carbon nanotubes; Field effect transistors; Green´s function methods; Ions; Mathematical model; Proton radiation effects; Carbon nanotube; field effect transistor (FET); non-equilibrium Green’s function (NEGF); quantum transport; transient effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2478002
