An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

Author

Aguirre-Morales, Jorge-Daniel ; Fregonese, Sebastien ; Mukherjee, Chhandak ; Maneux, Cristell ; Zimmer, Thomas

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

Volume

62

Issue

12

fYear

2015

Firstpage

4333

Lastpage

4339

Abstract

In this paper, an accurate compact model based on physical mechanisms for dual-gate bilayer graphene FETs is presented. This model is developed based on the 2-D density of states of bilayer graphene and is implemented in Verilog-A. Furthermore, physical equations describing the behavior of the source and drain access regions under back-gate bias are proposed. The accuracy of the developed large-signal compact model has been verified by comparison with measurement data from the literature.

Keywords

field effect transistors; graphene devices; hardware description languages; semiconductor device models; 2D density of states; C; Verilog-A; accurate physics-based compact model; back-gate bias; drain access regions; dual-gate bilayer graphene FET; large-signal compact model; physical equations; source access regions; Charge carrier processes; Field effect transistors; Graphene; Integrated circuit modeling; Mathematical model; Photonic band gap; Quantum capacitance; Bilayer; FET; Verilog-A; Verilog-A.; compact model; graphene; large signal;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2487243

Filename

7312955