Title :
An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs
Author :
Aguirre-Morales, Jorge-Daniel ; Fregonese, Sebastien ; Mukherjee, Chhandak ; Maneux, Cristell ; Zimmer, Thomas
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
Abstract :
In this paper, an accurate compact model based on physical mechanisms for dual-gate bilayer graphene FETs is presented. This model is developed based on the 2-D density of states of bilayer graphene and is implemented in Verilog-A. Furthermore, physical equations describing the behavior of the source and drain access regions under back-gate bias are proposed. The accuracy of the developed large-signal compact model has been verified by comparison with measurement data from the literature.
Keywords :
field effect transistors; graphene devices; hardware description languages; semiconductor device models; 2D density of states; C; Verilog-A; accurate physics-based compact model; back-gate bias; drain access regions; dual-gate bilayer graphene FET; large-signal compact model; physical equations; source access regions; Charge carrier processes; Field effect transistors; Graphene; Integrated circuit modeling; Mathematical model; Photonic band gap; Quantum capacitance; Bilayer; FET; Verilog-A; Verilog-A.; compact model; graphene; large signal;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2487243
