Title :
Design of a 700 V DB-nLDMOS Based on Substrate Termination Technology
Author :
Ming Qiao ; Liangliang Yu ; Gang Dai ; Ke Ye ; Yuru Wang ; Zhaoji Li ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A 700 V dual-buried-layer n-channel lateral double-diffused MOSFET (DB-nLDMOS) based on substrate termination technology (STT) is presented and experimentally demonstrated in this paper. The termination region is well analyzed and designed to avoid the premature avalanche breakdown caused by the curved junction. The 2-D and 3-D numerical simulations have been performed to optimize the three key parameters of ΔL1, ΔL2, and ΔL3 which impact on breakdown voltage (BV) greatly in the termination region. The simulation results show that the electric field peak is reduced and premature avalanche breakdown is avoided at the curved abrupt p-well/n-well junction with the STT. The experimental results demonstrate that low RON,sp of 105.6 mΩ · cm2 based on Ld and high BV of 788 V are achieved by the DB-nLDMOS.
Keywords :
MOSFET; avalanche breakdown; numerical analysis; semiconductor device breakdown; 2D numerical simulations; 3D numerical simulations; DB-nLDMOS; avalanche breakdown; breakdown voltage; curved junction; dual-buried-layer n-channel lateral double-diffused MOSFET; electric field peak; p-well-n-well junction; substrate termination technology; voltage 700 V; voltage 788 V; Avalanche breakdown; Doping; Integrated circuit layout; Junctions; MOSFET; Semiconductor process modeling; Substrates; 700 V; curvature radius; curved junction extension; dual-buried-layer n-channel lateral double-diffused MOSFET (DB-nLDMOS); substrate termination technology (STT); transitional region; transitional region.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2491324
