Bulk-Driven CMOS Amplifier With High EMI Immunity

Author

Hong Ge Li ; Hui Xin Bai ; Shu Guo Xie ; Dong Lin Su

Author_Institution

Sch. of Electron. & Inf. Eng., Beihang Univ., Beijing, China

Volume

57

Issue

6

fYear

2015

Firstpage

1425

Lastpage

1434

Abstract

This paper presents a bulk-driven CMOS amplifier with high immunity to electromagnetic interference (EMI). The approach is based on a bulk-driven input stage of MOSFET, thereby providing a low-voltage realization of a gate-driven stage. The bulk-driven amplifier includes the positive feedback, an input voltage drop, and dual input-stage symmetrical topology to improve the equivalent transconductance, dc linearity, and ac performance. As demonstrated by the measurements, the dc offset of the proposed amplifier is less than 70 mV, the measured PSD is about -66 dBm with 1 -V_pp EMI conveyed. The amplifier chip is implemented using a 0.35 μm standard CMOS process with a 1-V power supply.

Keywords

CMOS integrated circuits; amplifiers; electromagnetic interference; AC performance; DC linearity; MOSFET bulk driven input stage; bulk driven CMOS amplifier; bulk driven amplifier; dual input-stage symmetrical topology; electromagnetic interference immunity; equivalent transconductance; gate driven stage; high EMI immunity; input voltage drop; positive feedback; size 0.35 mum; voltage 1 V; CMOS integrated circuits; Electromagnetic interference; Immune system; Logic gates; MOSFET; Transconductance; CMOS bulk-driven; dc offset; electromagnetic interference (EMI) immunity; low-voltage bioamplifier;

fLanguage

English

Journal_Title

Electromagnetic Compatibility, IEEE Transactions on

Publisher

ieee

ISSN

0018-9375

Type

jour

DOI

10.1109/TEMC.2015.2458985

Filename

7317547