Highly piezoelectric MgZr co-doped aluminum nitride-based vibrational energy harvesters [Correspondence]

Author

Le Van Minh ; Hara, Motoaki ; Yokoyama, Tsuyoshi ; Nishihara, Tokihiro ; Ueda, Masanori ; Kuwano, Hiroki

Author_Institution

Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan

Volume

62

Issue

11

fYear

2015

fDate

11/1/2015 12:00:00 AM

Firstpage

2005

Lastpage

2008

Abstract

The first MgZr co-doped AlN-based vibrational energy harvester (VEH) is presented. (MgZr)AlN, which is a new class of doped AlN, provides high piezoelectricity and cost advantage. Using 13%-(MgZr)-doped AlN for micromachined VEHs, maximum output power of 1.3 μW was achieved with a Q-factor of 400 when resonant frequency, vibration acceleration, load resistance were 792 Hz, 8 m/s², and 1.1 MΩ, respectively. Normalized power density was 8.1 kW.g^-2.m^-3. This was one of the highest values among the currently available piezoelectric VEHs.

Keywords

Q-factor; aluminium compounds; energy harvesting; magnesium compounds; piezoelectric transducers; vibrations; Q-factor; load resistance; normalized power density; piezoelectric VEH; piezoelectric aluminum nitride-based vibrational energy harvesters; resonant frequency; vibration acceleration; Aluminum nitride; Art; III-V semiconductor materials; Power generation; Resonant frequency; Silicon; Yttrium;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2014.006750

Filename

7321707